SOD-123 Plastic-Encapsulate Diodes BZT52C2V4-BZT52C43 Zener Diode
Features
Planar die construction
500mW power dissipation on ceramic PBC
General purpose, medium current
Ideally suited for automated assembly processes
Available in lead free version
Applications
Voltage stabilization
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25℃
| Parameter |
Test Conditions |
Type |
Symbol |
Value |
Unit |
| Forward Voltage (Note 2) @ I F = 10mA |
|
|
VF |
0.9 |
V |
| Thermal Resistance from Junction to Ambient |
|
|
R θJA |
625 |
CW |
| Junction temperature |
|
|
Tj |
150 |
℃ |
| Storage temperature range |
|
|
Tstg |
-55~+150 |
℃ |
ELECTRICAL CHARACTERISTICS
T a =25 ℃ unless otherwise specified
| |
|
Zener Voltage Range (Note 2) |
Maximum Zener Impedance
(Note 3)
|
Maximum
Reverse
Current
(Note 2
|
Typical
Temperature
Coefficient
@I ZTC mV/ ℃
|
Test
Current
I ZTC
|
| |
|
V Z @I ZT |
I ZT |
Z ZT @I ZT |
Z ZK @I ZK |
I ZK |
I R |
V R |
|
| |
|
Nom V |
Min(V) |
Max(V) |
(mA) |
Ω |
(mA) |
μA |
V |
Min |
Max |
mA |
| BZT52C2V4 |
WX |
2.4 |
2.0 |
2.6 |
5 |
100 |
600 |
1.0 |
50 |
1.0 |
-3.5 |
0 |
5 |
| BZT52C2V7 |
W1 |
2.7 |
2.5 |
2.9 |
5 |
100 |
600 |
1.0 |
20 |
1.0 |
-3.5 |
0 |
5 |
| BZT52C3V0 |
W2 |
3.0 |
2.8 |
3.2 |
5 |
95 |
600 |
1.0 |
10 |
1.0 |
-3.5 |
0 |
5 |
| BZT52C3V3 |
W3 |
3.3 |
3.1 |
3.5 |
5 |
95 |
600 |
1.0 |
5 |
1.0 |
-3.5 |
0 |
5 |
| BZT52C3V6 |
W4 |
3.6 |
3.4 |
3.8 |
5 |
90 |
600 |
1.0 |
5 |
1.0 |
-3.5 |
0 |
5 |
| BZT52C3V9 |
W5 |
3.9 |
3.7 |
4.1 |
5 |
90 |
600 |
1.0 |
3 |
1.0 |
-3.5 |
0 |
5 |
| BZT52C4V3 |
W6 |
4.3 |
4.0 |
4.6 |
5 |
90 |
600 |
1.0 |
3 |
1.0 |
-3.5 |
0 |
5 |
| BZT52C4V7 |
W7 |
4.7 |
4.4 |
5.0 |
5 |
80 |
500 |
1.0 |
3 |
2.0 |
-3.5 |
0.2 |
5 |
| BZT52C5V1 |
W8 |
5.1 |
4.8 |
5.4 |
5 |
60 |
480 |
1.0 |
2 |
2.0 |
-2.7 |
1.2 |
5 |
| BZT52C5V6 |
W9 |
5.6 |
5.2 |
6.0 |
5 |
40 |
400 |
1.0 |
1 |
2.0 |
-2.0 |
2.5 |
5 |
| BZT52C6V2 |
WA |
6.2 |
5.8 |
6.6 |
5 |
10 |
150 |
1.0 |
3 |
4.0 |
0.4 |
3.7 |
5 |
| BZT52C6V8 |
WB |
6.8 |
6.4 |
7.2 |
5 |
15 |
80 |
1.0 |
2 |
4.0 |
1.2 |
4.5 |
5 |
| BZT52C7V5 |
WC |
7.5 |
7.0 |
7.9 |
5 |
15 |
80 |
1.0 |
1 |
5.0 |
2.5 |
5.3 |
5 |
| BZT52C8V2 |
WD |
8.2 |
7.7 |
8.7 |
5 |
15 |
80 |
1.0 |
0.7 |
5.0 |
3.2 |
6.2 |
5 |
| BZT52C9V1 |
WE |
9.1 |
8.5 |
9.6 |
5 |
15 |
100 |
1.0 |
0.5 |
6.0 |
3.8 |
7.0 |
5 |
| BZT52C10 |
WF |
10 |
9.4 |
10.6 |
5 |
20 |
150 |
1.0 |
0.2 |
7.0 |
4.5 |
8.0 |
5 |
| BZT52C11 |
WG |
11 |
10.4 |
11.6 |
5 |
20 |
150 |
0.5 |
0.1 |
8.0 |
5.4 |
9.0 |
5 |
| BZT52C12 |
WH |
12 |
11.4 |
12.7 |
5 |
25 |
150 |
0.5 |
0.1 |
8.0 |
6.0 |
10 |
5 |
| BZT52C13 |
WI |
13 |
12.4 |
14.1 |
5 |
30 |
170 |
0.5 |
0.1 |
8.0 |
7.0 |
11 |
5 |
| BZT52C15 |
WJ |
15 |
13.8 |
15.6 |
5 |
30 |
200 |
0.5 |
0.1 |
10.5 |
9.2 |
13 |
5 |
| BZT52C16 |
WK |
16 |
15.3 |
17.1 |
5 |
40 |
200 |
0.5 |
0.1 |
11.2 |
10.4 |
14 |
5 |
| BZT52C18 |
WL |
18 |
16.8 |
19.1 |
5 |
45 |
225 |
0.5 |
0.1 |
12.6 |
12.4 |
16 |
5 |
| BZT52C20 |
WM |
20 |
18.8 |
21.2 |
5 |
55 |
225 |
0.5 |
0.1 |
14.0 |
14.4 |
18 |
5 |
| BZT52C22 |
WN |
22 |
22.8 |
23.3 |
5 |
55 |
250 |
0.5 |
0.1 |
15.4 |
16.4 |
20 |
5 |
| BZT52C24 |
WO |
24 |
22.8 |
25.6 |
5 |
70 |
250 |
0.5 |
0.1 |
16.8 |
18.4 |
22 |
5 |
| BZT52C27 |
WP |
27 |
25.1 |
28.9 |
2 |
80 |
300 |
0.5 |
0.1 |
18.9 |
21.4 |
25.3 |
2 |
| BZT52C30 |
WQ |
30 |
28.0 |
32.0 |
2 |
80 |
300 |
0.5 |
0.1 |
21.0 |
24.4 |
29.4 |
2 |
| BZT52C33 |
WR |
33 |
31.0 |
35.0 |
2 |
80 |
325 |
0.5 |
0.1 |
23.1 |
27.4 |
33.4 |
2 |
| BZT52C36 |
WS |
36 |
34.0 |
38.0 |
2 |
90 |
350 |
0.5 |
0.1 |
25.2 |
30.4 |
37.4 |
2 |
| BZT52C39 |
WT |
39 |
37.0 |
41.0 |
2 |
130 |
350 |
0.5 |
0.1 |
27.3 |
33.4 |
41.5 |
2 |
| BZT52C43 |
WU |
43 |
40.0 |
46.0 |
2 |
100 |
700 |
1 |
0.1 |
32 |
10 |
12 |
5 |
Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm 2 .
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz
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Product Tags:
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SOD-123 BZT52C2V4-BZT52C43 Surface Mount Diode Images
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